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IRF9Z10PBF +BOM

Three-pin transistor with power tab for enhanced thermal performance

IRF9Z10PBF General Description

P-Channel 60 V 6.7A (Tc) 43W (Tc) Through Hole TO-220AB

irf9z10pbf

Key Features

  • Elevated power density
  • Fully commutated switching
  • Low input current
  • High efficiency operation

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style Through Hole
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 6.7 A
Rds On - Drain-Source Resistance 500 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 12 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 43 W Channel Mode Enhancement
Series IRF9Z Configuration Single
Fall Time 31 ns Product Type MOSFET
Rise Time 63 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 10 ns Typical Turn-On Delay Time 11 ns
Part # Aliases IRF9Z10PBF-BE3 Unit Weight 0.068784 oz
Power MOSFET

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L
L**n 12/03/2023

Soldering quality, delivery is fast, all you need.

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In Stock: 6,362

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.815 $0.82
200+ $0.316 $63.20
500+ $0.305 $152.50
1000+ $0.300 $300.00

The prices below are for reference only.

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