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IRGP4068D-EPBF +BOM

The IRGP4068D-EPBF is a cutting-edge N-channel insulated gate bipolar transistor (IGBT) chip tailored for demanding power electronic applications

IRGP4068D-EPBF General Description

The IRGP4068D-EPBF is a cutting-edge Integrated Power Module (IPM) that sets a new standard in high voltage applications. With a robust 650V IGBT and silicon diode integrated into a compact package, this IPM is a powerhouse capable of delivering up to 40A of current. Its high voltage handling capability makes it a versatile choice for a wide range of industrial needs, from motor drives to other high power applications

Infineon Technologies Corporation Inventory

Key Features

  • Low VCE(ON) Trench IGBT Technology
  • low Switching Losses
  • Maximum Junction temperature 175 °C
  • 5 μS short circuit SOA
  • Square RBSOA
  • 100% of the parts tested for ILM
  • Positive VCE(ON) Temperature co-efficient
  • Ultra-low VF Hyperfast Diode
  • Tight parameter distribution
  • Lead Free Package
  • Device optimized for induction heating and soft switching applications
  • High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF
  • Rugged transient Performance for increased reliability
  • Excellent Current sharing in parallel operation
  • Low EMI
Infineon Technologies Corporation Original Stock

Application

  • Uninterruptible power supply (UPS)
  • Industrial heating and welding
  • Solutions for solar energy systems
  • Induction cooking

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series -
IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 96 A Current - Collector Pulsed (Icm) 144 A
Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A Power - Max 330 W
Switching Energy 1.28mJ (off) Input Type Standard
Gate Charge 95 nC Td (on/off) @ 25°C -/145ns
Test Condition 400V, 48A, 10Ohm, 15V Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Base Product Number IRGP4068
RHoS yes PBFree yes
HalogenFree no Product Category IGBT Transistors
Technology Si Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 2.14 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 96 A Pd - Power Dissipation 330 W
Minimum Operating Temperature - 55 C Height 20.7 mm
Length 15.87 mm Product Type IGBT Transistors
Factory Pack Quantity 25 Subcategory IGBTs
Width 5.31 mm Unit Weight 0.229281 oz

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Ratings and Reviews

More
A
A**r 08/08/2023

The parcel came very quickly. A week was at the post office. I am very pleased with the product and the seller is just super. Thanks to the seller everything was packed. I advise all this seller. ÷)

6
K
K**n 07/21/2023

Sent the seller for a very short time but it came very quickly.

10
J
J**n 10/17/2022

The parcel was received in ukraine after 25 days from the day of order.I received the parcel in ukraine 25 days from the day of order.

16
Z
Z**e 10/12/2022

that's perfect. feels like good quality for the price

7

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