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IRFF131 +BOM
8A, 80V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
TO-205AF-3-
Manufacturer:
International Rectifier
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Mfr.Part #:
IRFF131
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Datasheet:
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Part Life Cycle Code:
Active
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Configuration:
SINGLE
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DS Breakdown Voltage-Min:
80 V
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Drain Current-Max (ID):
8 A
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EDA/CAD Models:
Availability: 5160 PCS
Please fill in the short form below and we will provide you the quotation immediately.
IRFF131 General Description
N-Channel Enhancement-Mode Power Field-Effect Transistors7.0A and 8.0A, 60V-100V rDS(on) = 0.18 Ω and 0.25 Ω
Specifications
Part Life Cycle Code | Active | Reach Compliance Code | |
Configuration | SINGLE | DS Breakdown Voltage-Min | 80 V |
Drain Current-Max (ID) | 8 A | Drain-source On Resistance-Max | 0.18 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-205AF |
JESD-30 Code | O-MBCY-W3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 32 A |
Qualification Status | COMMERCIAL | Surface Mount | NO |
Terminal Form | WIRE | Terminal Position | BOTTOM |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 80 V | Id - Continuous Drain Current | 32 A |
Rds On - Drain-Source Resistance | 180 mOhms | Pd - Power Dissipation | 25 W |
Tradename | StrongIRFET | Height | 4.54 mm |
Length | 8.3 mm | Product Type | MOSFET |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Width | 8.3 mm | Unit Weight | 0.229281 oz |
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In Stock: 5,160
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $1.727 | $1.73 |
200+ | $0.668 | $133.60 |
500+ | $0.645 | $322.50 |
1000+ | $0.634 | $634.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IRFF131, guaranteed quotes back within 12hr.
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