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IRG4PC50WPBF +BOM

IGBT, IRG4PC50W 55A TO247

Manufacturer:

Infineon
Mfr.Part #:

IRG4PC50WPBF
Datasheet:

IRG4PC50WPBF Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for IRG4PC50WPBF

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IRG4PC50WPBF General Description

Infineon's IRG4PC50WPBF IGBT boasts a compact and lightweight design, featuring a TO-247 package type for easy mounting and connection. Its high short circuit withstand time of 10µs makes it a top choice for applications where short circuit protection is essential. Moreover, the device's wide operating temperature range of -55°C to 150°C and high di/dt capability enable its use in diverse environmental conditions and high-frequency switching scenarios

Key Features

This IGBT module has a high surge current capability and low inductance.
The IRG4PC50WPBF is ideal for applications requiring high speed switching and low power losses.

Application

Ideal for power supplies
Perfect for motor drives
Great for inverters

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	2.3 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	55 A
Pd - Power Dissipation	200 W	Minimum Operating Temperature	- 55 C
Height	20.7 mm	Length	15.87 mm
Product Type	IGBT Transistors	Factory Pack Quantity	400
Subcategory	IGBTs	Width	5.31 mm
Unit Weight	1.340411 oz