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See Technical Specifications

IRGP50B60PDPBF +BOM

Trans IGBT Chip N-CH 600V 75A 370000mW 3-Pin(3+Tab) TO-247AC Tube

Manufacturer:

International Rectifier
Mfr.Part #:

IRGP50B60PDPBF
Datasheet:

IRGP50B60PDPBF Datasheet (PDF)
IGBT Type:

NPT
Voltage - Collector Emitter Breakdown (Max):

600 V
Current - Collector (Ic) (Max):

75 A
Current - Collector Pulsed (Icm):

150 A
EDA/CAD Models:

Request Free CAD Models for IRGP50B60PDPBF

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IRGP50B60PDPBF General Description

In summary, the IRGP50B60PDPBF is a high-quality IGBT with impressive specifications. From its high current and voltage ratings to its low saturation voltage and power dissipation capabilities, this device is a dependable solution for demanding power electronics designs. With its TO-247AC package style and exceptional performance characteristics, the IRGP50B60PDPBF is a top choice for engineers seeking reliable and efficient transistor solutions

Key Features

NPT technology, positive temperature coefficient
Low collector-to-emitter saturation voltage
Lower parasitic capacitances
Minimal tail current
HEXFRED™ ultrafast soft-recovery co-pack diode
Tighter distribution of parameters
High reliability
High switching frequency up to 150kHz

Application

Communications & Networking
Power Management
Consumer Electronics

Specifications

IGBT Type	NPT	Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	75 A	Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 50A	Power - Max	370 W
Switching Energy	360µJ (on), 380µJ (off)	Input Type	Standard
Gate Charge	360 nC	Td (on/off) @ 25°C	34ns/130ns
Test Condition	390V, 33A, 3.3Ohm, 15V	Reverse Recovery Time (trr)	50 ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole