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IRL530NPBF +BOM

Silicon-based transistor with extremely low input capacitance of 0.12ohm, ideal for RF power amplifiers and switch-mode power supplies

Manufacturer:

Infineon
Mfr.Part #:

IRL530NPBF
Datasheet:

IRL530NPBF Datasheet (PDF)
FunctionalPacking:

TUBE
AddProductInfo:

Planar Mosfet - TO-220
Msl:

NA
HalogenFree:

yes
EDA/CAD Models:

Request Free CAD Models for IRL530NPBF

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRL530NPBF General Description

The IRL530NPBF is a N Channel MOSFET designed for logic level applications, featuring a continuous drain current of 15A and a drain source voltage of 100V. With a low on resistance of 100mohm and a maximum threshold voltage of 2V, this transistor is suitable for high power electronic applications. The TO-220AB package style with 3 pins and 2.54mm lead spacing makes it easy to integrate into various circuit designs. With a power dissipation of 63W and a pulse current rating of 60A, this transistor can handle high power loads while maintaining stability and reliability. The through hole termination type ensures secure and reliable connections in the circuit. With a maximum voltage rating of 100V for both drain source and gate source, the IRL530NPBF provides a wide operating range for different applications

Key Features

High-speed switching capability
Low input noise distortion
Suitable for communication systems

Application

Efficient power management
Advanced switching circuits
Precision voltage regulators

Specifications

functionalPacking	TUBE	addProductInfo	Planar Mosfet - TO-220
msl	NA	halogenFree	yes
customerInfo	STANDARD	fgr	FLQ
productClassification	COM	productStatusInfo	discontinued
hfgr	P	pbFree	yes
moistureProtPack	NON DRY	orderingCode	SP001578734
opn	IRL530NPBF	docuNoCancellation	PD_091_22B
completelyPbFree	no	sapMatnrSali	SP001578734