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IRLR2705TRPBF +BOM

DPAK-packaged N-channel Silicon MOSFET

Manufacturer:

Infineon
Mfr.Part #:

IRLR2705TRPBF
Datasheet:

IRLR2705TRPBF Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

IRLR2705TRPBF General Description

The IRLR2705TRPBF is a high-performing N Channel MOSFET transistor with a maximum Drain-Source Voltage (Vds) of 55V and Continuous Drain Current (Id) of 28A. Its low On Resistance (Rds(on)) of 40mohm ensures efficient power handling, making it ideal for a wide range of applications requiring high current capability. With a Rds(on) Test Voltage (Vgs) of 10V, this MOSFET offers reliable and consistent performance under varying operating conditions

Key Features

- Maximum drain to source breakdown voltage of 55 V.
- Gate source threshold voltage ranges from 1 V to 2 V.
- Typical turn-off delay time of 21 ns.
- Packaged in TO-252-3 package.
- Unit weight of 0.139332 oz.
- Single n-channel enhancement mode FET.
- Operating temperature range of -55 C.

Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	55 V	Id - Continuous Drain Current	28 A
Rds On - Drain-Source Resistance	65 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	16.7 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	46 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	29 ns
Forward Transconductance - Min	11 S	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	100 ns	Factory Pack Quantity	2000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	HEXFET Power MOSFET	Typical Turn-Off Delay Time	21 ns
Typical Turn-On Delay Time	8.9 ns	Width	6.22 mm
Unit Weight	0.011640 oz