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IRLS3036PBF +BOM

With a low on-state resistance of 0.0024 ohm, the IRLS3036PBF is a high performance N-CHANNEL Power MOSFET

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IRLS3036PBF General Description

N-Channel 60 V 195A (Tc) 380W (Tc) Surface Mount D2PAK

IRLS3036PBF

Key Features

  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current : 10 μA (Max.) @ VDS = 100V
  • Lower RDS(ON) : 0.176Ω (Typ.)

Specifications

Series HEXFET® FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 165A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 4.5 V Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 11210 pF @ 50 V Power Dissipation (Max) 380W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount

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In Stock: 9,489

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.218 $2.22
200+ $0.858 $171.60
500+ $0.829 $414.50
1000+ $0.813 $813.00

The prices below are for reference only.

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