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IGBT 2500 V 5 A 32 W Surface Mount TO-268AA
TO-268AAManufacturer:
Mfr.Part #:
IXBT2N250
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
2.5 kV
EDA/CAD Models:
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The IXBT2N250 stands as a groundbreaking BiMOSFET, integrating the strengths of MOSFETs and IGBTs into one exceptional device. Its non-epitaxial construction and advanced fabrication processes have set it apart as a resounding success. Ideal for parallel operation, these high voltage devices feature a positive voltage temperature coefficient for both their saturation voltage and forward voltage drop of their intrinsic diode. Additionally, the embedded "free" intrinsic body diode acts as a safeguard, providing an alternative path for the inductive load current during device turn-off and effectively shielding against damage from high Ldi/dt voltage transients
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | SMD/SMT | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 2.5 kV | Collector-Emitter Saturation Voltage | 3.8 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 5 A |
Pd - Power Dissipation | 32 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | Planar |
Continuous Collector Current Ic Max | 5 A | Gate-Emitter Leakage Current | +/- 100 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Tradename | BIMOSFET |
Unit Weight | 0.211644 oz |
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