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See Technical Specifications

IXFK170N10P +BOM

Single N-Channel Power Mosfet with 100 Vds and 10 mOhm resistance - TO-264

Manufacturer:

Littelfuse
Mfr.Part #:

IXFK170N10P
Datasheet:

IXFK170N10P Datasheet (PDF)
Drain-Source Voltage (V):

100
Maximum On-Resistance @ 25 ℃ (Ohm):

0.009
Continuous Drain Current @ 25 ℃ (A):

170
Gate Charge (nC):

198
EDA/CAD Models:

Request Free CAD Models for IXFK170N10P

IXFK170N10P General Description

When it comes to cutting-edge technology and advanced features, the IXFK170N10P Polar™ HiPerFETs reign supreme. Boasting a faster body diode that reduces the reverse recovery time (trr), these FETs are engineered for high-performance applications such as phase-shift bridges in motor control and UPS operations. The HiPerFET family offers unparalleled benefits, including the lowest RDS(on), low RthJC, low Qg, and enhanced DV/DT capability, making them the go-to choice for demanding projects

Key Features

High Voltage Capability
Low Leakage Current
Robust ESD Performance
Compact Design

Application

Eco-Friendly Power Solutions
Fast Charging Applications
Sophisticated Motor Control

Specifications

Drain-Source Voltage (V)	100	Maximum On-Resistance @ 25 ℃ (Ohm)	0.009
Continuous Drain Current @ 25 ℃ (A)	170	Gate Charge (nC)	198
Input Capacitance, CISS (pF)	6000	Thermal resistance [junction-case] (K/W)	0.21
Configuration	Single	Power Dissipation (W)	715
Maximum Reverse Recovery (ns)	150	Sample Request	No
Check Stock	Yes