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See Technical Specifications

IXTQ30N60P +BOM

Unipolar N-MOSFET transistor engineered for applications requiring a maximum voltage of 600V and a current of 30A

Manufacturer:

Ixys
Mfr.Part #:

IXTQ30N60P
Datasheet:

IXTQ30N60P Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IXTQ30N60P

Avaq Semiconductor offers the highly versatile and reliable IXTQ30N60P driver, produced by Ixys. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IXTQ30N60P.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	30 A	Rds On - Drain-Source Resistance	240 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	540 W
Channel Mode	Enhancement	Series	IXTQ30N60
Configuration	Single	Fall Time	25 ns
Forward Transconductance - Min	25 S	Height	20.3 mm
Length	15.8 mm	Product Type	MOSFET
Rise Time	20 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	80 ns	Typical Turn-On Delay Time	29 ns
Width	4.9 mm	Unit Weight	0.194007 oz