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KGF50N60KDA +BOM

N-Channel Insulated Gate Bipolar Transistor with TO-247 packaging, designed for 100A collector current and 600V breakdown voltage

Manufacturer:

Kec Semicon
Mfr.Part #:

KGF50N60KDA
Datasheet:

KGF50N60KDA Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
Collector Current-Max (IC):

100 A
Collector-Emitter Voltage-Max:

600 V
EDA/CAD Models:

Request Free CAD Models for KGF50N60KDA

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KGF50N60KDA General Description

The KGF50N60KDA from Infineon Technologies is a top-of-the-line silicon carbide power MOSFET that boasts impressive specifications and performance capabilities. With a breakdown voltage of 600V and a continuous drain current of 50A, this MOSFET is well-suited for a wide range of high-power applications across various industries. Its low on-state resistance of 60mΩ ensures minimal power losses and maximum system efficiency, making it a popular choice for demanding electronic projects

Key Features

High reliability and availability
Low inductance and capacitance
Surge current testing passed
High thermal stability ensured

Application

Electric cars
Wind power
Industrial motors
Solar panels
Power backups
Energy storage

Specifications

Part Life Cycle Code	Active	ECCN Code	EAR99
Collector Current-Max (IC)	100 A	Collector-Emitter Voltage-Max	600 V
Configuration	SINGLE WITH BUILT-IN DIODE	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Polarity/Channel Type	N-CHANNEL
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	310 ns
Turn-on Time-Nom (ton)	110 ns