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KRC102S +BOM

Low voltage, high frequency switching device required

KRC102S General Description

KRC101S~KRC106S EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

BUILT IN BIAS RESISTOR RATIO 1

Application

SWITCHING

Specifications

Part Life Cycle Code Active Pin Count 3
Reach Compliance Code ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTOR RATIO 1 Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 50 JESD-30 Code R-PDSO-G3
Number of Elements 1 Number of Terminals 3
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type NPN
Qualification Status Not Qualified Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 200 MHz

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 7,464

Minimum Order: 1

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