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KSC2383OTA +BOM

60V 900mW NPN Bipolar Transistors

KSC2383OTA General Description

Bipolar (BJT) Transistor NPN 160 V 1 A 100MHz 900 mW Through Hole TO-92-3

Key Features

  • Effortless Navigation with Gesture Controls
  • Compact Design for Convenient Storage & Travel
  • Durable Construction with High-Quality Materials

Application

  • This versatile product is perfect for any task.
  • Experience the convenience of this all-purpose item.
  • Use this product for all your daily needs.

Specifications

Source Content uid KSC2383OTA Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 45 Weeks, 5 Days
Collector Current-Max (IC) 1 A Collector-Emitter Voltage-Max 160 V
Configuration SINGLE DC Current Gain-Min (hFE) 100
JESD-30 Code O-PBCY-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.9 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position BOTTOM
Transistor Application AMPLIFIER Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz

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