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KSD2012GTU +BOM

NPN Epitaxial Silicon Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

KSD2012GTU General Description

Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3

Key Features

  • Sleek and portable design
  • Fast wireless connectivity
  • Smooth multitasking
  • Built-in speakers

Application

  • Automotive uses
  • Energy management
  • Robotics applied
  • Consumer tech
  • Industrial apps
  • Telecom systems

Specifications

Transistor Type NPN Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 60 V Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 5V
Power - Max 25 W Frequency - Transition 3MHz
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Base Product Number KSD2012

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In Stock: 9,692

Minimum Order: 1

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