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KSD5041 +BOM

Bipolar Transistors - BJT NPN/20V/5A/180-600 TO-92

email Email: [email protected]
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tel Tel: +852 95804164

Key Features

  • Low Collector-Emitter Saturation Voltage
  • High Performance at Low Supply VoltageAf Output Amplifier for Electronic Flash Unit

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 20 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 7 V Maximum DC Collector Current 5 A
Pd - Power Dissipation 750 mW Gain Bandwidth Product fT 150 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series KSD504 Continuous Collector Current 5 A
DC Collector/Base Gain hfe Min 180 DC Current Gain hFE Max 600
Height 4.58 mm Length 4.58 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 2000
Subcategory Transistors Technology Si
Width 3.86 mm Unit Weight 0.008466 oz

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