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KSD526O +BOM
Bipolar (BJT) Transistor NPN 80 V 4 A 8MHz 30 W Through Hole TO-220-3
TO-220-3-
Manufacturer:
onsemi
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Mfr.Part #:
KSD526O
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Datasheet:
-
Transistor Type:
NPN
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Current - Collector (Ic) (Max):
4 A
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Voltage - Collector Emitter Breakdown (Max):
80 V
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Vce Saturation (Max) @ Ib, Ic:
1.5V @ 300mA, 3A
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EDA/CAD Models:
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KSD526O General Description
Bipolar (BJT) Transistor NPN 80 V 4 A 8MHz 30 W Through Hole TO-220-3
Specifications
Series | - | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 4 A | Voltage - Collector Emitter Breakdown (Max) | 80 V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A | Current - Collector Cutoff (Max) | 30µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA, 5V | Power - Max | 30 W |
Frequency - Transition | 8MHz | Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole | Base Product Number | KSD526 |
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In Stock: 7,791
Minimum Order: 1
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