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KSD526Y +BOM

NPN Epitaxial Silicon Transistor

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

Key Features

  • Low power consumption of 3mW
  • Compact package size of 5mm x 10mm
  • Suitable for portable device applications

Application

  • The product is versatile and reliable.
  • Perfect for a variety of uses.
  • An essential tool for any task.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 450 mV
Maximum DC Collector Current 4 A Pd - Power Dissipation 30 W
Gain Bandwidth Product fT 8 MHz Minimum Operating Temperature -
Maximum Operating Temperature + 150 C Series KSD526
Continuous Collector Current 4 A DC Collector/Base Gain hfe Min 40
DC Current Gain hFE Max 240 Height 9.4 mm
Length 10.1 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 200 Subcategory Transistors
Technology Si Width 4.7 mm
Unit Weight 0.063493 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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