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KSE350S +BOM

PNP Bipolar Transistors - Epitaxial Silicon BJT

KSE350S General Description

Bipolar (BJT) Transistor PNP 300 V 500 mA 20 W Through Hole TO-126-3

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 300 V Collector- Base Voltage VCBO 300 V
Emitter- Base Voltage VEBO 5 V Maximum DC Collector Current 500 mA
Pd - Power Dissipation 20 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Series KSE350
Continuous Collector Current - 500 mA DC Collector/Base Gain hfe Min 30
DC Current Gain hFE Max 240 Height 11 mm
Length 8 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 250 Subcategory Transistors
Technology Si Width 3.25 mm
Part # Aliases KSE350S_NL Unit Weight 0.026843 oz

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