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KSP06 +BOM

Low-voltage, low-power device for audio and digital circuit

Key Features

  • High-Power Amplifier
  • Low-Noise Transistor
  • Radio Frequency Device
  • High-Speed Switching
  • Medium-Power Driver
  • General Purpose Transistor

Application

  • Can be used in various scenarios.
  • Suitable for multiple applications.
  • Works well in many situations.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 4 V Maximum DC Collector Current 500 mA
Pd - Power Dissipation 625 mW Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series KSP06 Continuous Collector Current 500 mA
DC Collector/Base Gain hfe Min 50 DC Current Gain hFE Max 50 at 10 mA, 1 V
Height 4.7 mm Length 4.7 mm
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si Width 3.93 mm
Unit Weight 0.008466 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 3,990

Minimum Order: 1

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