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KSP44 +BOM

Compact power transistor suitable for small signal applicatio

Key Features

  • Advanced Power Transistor
  • KSP45 Collector-Emitter Voltage: VCEO= 700 V
  • Silicon NPN Epitaxial Layer
  • High-Speed Switching Application
  • NPN Power Transistor with High Current Gain
  • Collector-Emitter Voltage: VCEO= 600 V, HFE=1000

Application

  • Efficient and effective
  • Highly recommended for all
  • Essential for everyday tasks

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 400 V Collector- Base Voltage VCBO 500 V
Emitter- Base Voltage VEBO 6 V Maximum DC Collector Current 300 mA
Pd - Power Dissipation 625 mW Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series KSP4
Continuous Collector Current 300 mA DC Collector/Base Gain hfe Min 50
DC Current Gain hFE Max 200 Height 4.58 mm
Length 4.58 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 10000 Subcategory Transistors
Technology Si Width 3.86 mm
Unit Weight 0.008466 oz

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