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Bipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF
TO-3PF-3Manufacturer:
STMicroelectronics
Mfr.Part #:
MD2009DFX
Datasheet:
Configuration:
Single
Transistor Polarity:
NPN
Mounting Style:
Through Hole
DC Collector/Base Gain Hfe Min:
5
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Bipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF
State-of-the-art technology:
diffused collector enhanced generation
More stable performance versus operating
temperature variation
Low base drive requirement
Tighter hFE range at operating collector current
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC European
directive
Horizontal deflection output for TV
Product Category | Bipolar Transistors - Pre-Biased | Configuration | Single |
Transistor Polarity | NPN | Mounting Style | Through Hole |
DC Collector/Base Gain hfe Min | 5 | Collector- Emitter Voltage VCEO Max | 700 V |
Continuous Collector Current | 10 A | Peak DC Collector Current | 16 A |
Pd - Power Dissipation | 58 W | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Series | MD2009DFX |
Emitter- Base Voltage VEBO | 7 V | Height | 16.5 mm |
Length | 15.7 mm | Product Type | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 30 | Subcategory | Transistors |
Width | 5.7 mm | Unit Weight | 0.245577 oz |
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