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MMBT2222A-G +BOM

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Bipolar (BJT) Transistor NPN 40 V 600 mA 300MHz 300 mW Surface Mount SOT-23-3

NPN Silicon Epitaxial Planar Transistor for Switching and amplifier application.

Part Life Cycle Code	Not Recommended	Reach Compliance Code	compliant
ECCN Code	EAR99	Collector Current-Max (IC)	0.6 A
Collector-Emitter Voltage-Max	40 V	Configuration	SINGLE
DC Current Gain-Min (hFE)	42	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	0.3 W	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	10
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	300 MHz	Turn-off Time-Max (toff)	285 ns
Turn-on Time-Max (ton)	35 ns	Transistor Type	NPN
Current - Collector (Ic) (Max)	600 mA	Voltage - Collector Emitter Breakdown (Max)	40 V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA	Current - Collector Cutoff (Max)	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10mV	Power - Max	300 mW
Frequency - Transition	300MHz	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	MMBT2222