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MPQ2907A +BOM

Packed punch: two matched transistors in a single MPQ29A package

MPQ2907A General Description

Bipolar (BJT) Transistor Array 4 PNP (Quad) 60V 600mA 200MHz 650mW Through Hole TO-116

Key Features

  • Ultra High PSRR: 70dB at 5kHz
  • Low Noise Margin: 30mVpp
  • Overvoltage Protection

Application

  • LED driver circuits
  • Battery charging systems

Specifications

ECCN (US) EAR99 Part Status Obsolete
HTS 8541.21.00.95 Automotive No
PPAP No Type PNP
Category Bipolar Power Material Si
Configuration Quad Number of Elements per Chip 4
Maximum Collector Base Voltage (V) 60 Maximum Collector-Emitter Voltage (V) 60
Maximum Emitter Base Voltage (V) 5 Maximum Base Emitter Saturation Voltage (V) 1.3@15mA@150mA|2.6@30mA@300mA
Maximum Collector-Emitter Saturation Voltage (V) 0.4@15mA@150mA|1.6@30mA@300mA Maximum DC Collector Current (A) 0.6
Minimum DC Current Gain 75@10mA@10V|100@150mA@10V|50@300mA@10V Maximum Power Dissipation (mW) 1900
Maximum Transition Frequency (MHz) 200(Min) Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150 Packaging Sleeve
Mounting Through Hole PCB changed 14
Pin Count 14 Lead Shape Through Hole

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