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MPQ3906 +BOM

Transistor GP BJT PNP

  • Manufacturer:

    Central Semiconductor Corp

  • Mfr.Part #:

    MPQ3906

  • Datasheet:

    MPQ3906 Datasheet (PDF) pdf-icon

  • Transistor Type:

    4 PNP (Quad)

  • Current - Collector (Ic) (Max):

    200mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 1mA, 10mA

  • EDA/CAD Models:

    eda-cad.png Request Free CAD Models for MPQ3906

MPQ3906 General Description

Bipolar (BJT) Transistor Array 4 PNP (Quad) 40V 200mA 200MHz 500mW Through Hole TO-116

Specifications

Transistor Type 4 PNP (Quad) Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA, 1V
Power - Max 500mW Frequency - Transition 200MHz
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number MPQ3906

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