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MPQ6002 +BOM

BJT transistors

  • Manufacturer:

    Central Semiconductor Corp

  • Mfr.Part #:

    MPQ6002

  • Datasheet:

    MPQ6002 Datasheet (PDF) pdf-icon

  • Transistor Type:

    2 NPN, 2 PNP

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    30V

  • Vce Saturation (Max) @ Ib, Ic:

    1.4V @ 30mA, 300mA

  • EDA/CAD Models:

    eda-cad.png Request Free CAD Models for MPQ6002

MPQ6002 General Description

Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 500mA 200MHz 650mW Through Hole TO-116

Specifications

Transistor Type 2 NPN, 2 PNP Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.4V @ 30mA, 300mA
Current - Collector Cutoff (Max) 30nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA, 10V
Power - Max 650mW Frequency - Transition 200MHz
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Base Product Number MPQ6002

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