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MS2215 +BOM

RF Transistor NPN 55V 16.5A 960MHz ~ 1.215GHz 300W Chassis Mount M216

  • Manufacturer:

    Microsemi Corporation

  • Mfr.Part #:

    MS2215

  • Datasheet:

    MS2215 Datasheet (PDF) pdf-icon

  • Transistor Type:

    NPN

  • Voltage - Collector Emitter Breakdown (Max):

    55V

  • Frequency - Transition:

    960MHz ~ 1.215GHz

  • Gain:

    7.5dB

MS2215 General Description

RF Transistor NPN 55V 16.5A 960MHz ~ 1.215GHz 300W Chassis Mount M216

Key Features

  •   REFRACTORY/GOLD METALLIZATION
  •   EMITTER SITE BALLASTED
  •   LOW THERMAL RESISTANCE
  •   INPUT/OUTPUT MATCHING
  •   OVERLAY GEOMETRY
  •   METAL/CERAMIC HERMETIC PACKAGE
  •   POUT = 150 W MIN. WITH 7.5 dB Gain

Specifications

Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V
Frequency - Transition 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f) -
Gain 7.5dB Power - Max 300W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 5V Current - Collector (Ic) (Max) 16.5A
Operating Temperature 250°C (TJ) Mounting Type Chassis Mount

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