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MT3S111P(TE12L,F) +BOM

RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

MT3S111P(TE12L,F) General Description

RF Transistor NPN 6V 100mA 8GHz 1W Surface Mount PW-MINI

Toshiba Semiconductor Inventory
Toshiba Semiconductor Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors Series -
Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V
Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 1.25dB @ 1GHz
Gain 10.5dB Power - Max 1W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Base Product Number MT3S111 feature-packaging Tape and Reel
feature-pin-count 4 feature-cecc-qualified No
feature-esd-protection feature-military No
feature-aec-qualified No feature-aec-qualified-number
feature-eccn-code EAR99 feature-svhc
feature-svhc-exceeds-threshold No

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In Stock: 6,806

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.990 $0.99
200+ $0.396 $79.20
500+ $0.381 $190.50
1000+ $0.375 $375.00

The prices below are for reference only.

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