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MTM15N50 +BOM

Compact power transistor for high-voltage applications

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MTM15N50 General Description

Power Field-Effect Transistor, 15A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

Specifications

Part Life Cycle Code Obsolete ECCN Code EAR99
HTS Code 8541.29.00.95 Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 15 A Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-204AE JESD-30 Code O-MBFM-P2
JESD-609 Code e0 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 250 W Pulsed Drain Current-Max (IDM) 65 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN LEAD Terminal Form PIN/PEG
Terminal Position BOTTOM Transistor Application SWITCHING
Transistor Element Material SILICON Turn-off Time-Max (toff) 630 ns
Turn-on Time-Max (ton) 240 ns

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