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See Technical Specifications

MTP2P50E +BOM

Top hat style design suitable for various electronic circuits

Manufacturer:

Onsemi
Mfr.Part #:

MTP2P50E
Datasheet:

MTP2P50E Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for MTP2P50E

MTP2P50E General Description

Offering unparalleled voltage-blocking capability and long-lasting performance, the MTP2P50E high voltage MOSFET is a standout option for applications requiring reliability and efficiency. With a unique termination scheme and robust design, this Power MOSFET excels in handling high energy in avalanche and commutation modes, ensuring uninterrupted operation under challenging conditions. Its energy-efficient construction includes a fast-recovery drain-to-source diode, enhancing overall functionality and safety precautions. Specifically engineered for high voltage and high-speed switching applications such as power supplies, converters, and PWM motor controls, this MOSFET is an ideal choice for bridge circuits where diode speed and safe operating areas are critical considerations. Its ability to provide an added safety margin against unexpected voltage fluctuations further enhances its appeal as a dependable component in various industries

Key Features

Rapid Fall-Time of Output Voltage
High Power Handling Capability Specified
Pulse Width Modulation (PWM) Compatible

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	2 A	Rds On - Drain-Source Resistance	6 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	75 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	19 ns	Forward Transconductance - Min	0.5 S
Height	9.28 mm	Length	10.28 mm
Product Type	MOSFET	Rise Time	14 ns
Factory Pack Quantity	50	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Type	MOSFET
Typical Turn-Off Delay Time	21 ns	Typical Turn-On Delay Time	12 ns
Width	4.82 mm	Unit Weight	0.068784 oz