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PBRN113ZT,215 +BOM

40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ

PBRN113ZT,215 General Description

NPN low V Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.PNP complement: PBRP113ZT

Nexperia Semiconductor (NXP) Inventory

Key Features

  • 600 mA output current capability
  • Low collector-emitter saturation voltage VCEsat
  • High current gain hFE
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • ± 10 % resistor ratio tolerance
Nexperia Semiconductor (NXP) Original Stock

Application

  • Digital application in automotive and industrial segments
  • Switching loads
  • Medium current peripheral driver
Nexperia Semiconductor (NXP) Inventory

Specifications

feature-packaging Tape and Reel feature-rad-hard
feature-pin-count 3 feature-cecc-qualified No
feature-esd-protection feature-military No
feature-aec-qualified Yes feature-aec-qualified-number AEC-Q101
feature-auto-motive Yes feature-p-pap
feature-eccn-code EAR99 feature-svhc Yes
feature-svhc-exceeds-threshold No

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