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PBSS5240T,215 +BOM

PNP low V transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4240T

PBSS5240T,215 General Description

PNP low V transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4240T

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Key Features

  • Improved thermal shock resistance
  • Reduced gate-to-source leakage current
  • Increased power handling capabilities
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Application

  • Solar panel regulators
  • Automotive power management
  • Portable electronics
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Specifications

Source Content uid PBSS5240T,215 Part Life Cycle Code Active
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Collector Current-Max (IC) 2 A
Collector-Emitter Voltage-Max 40 V Configuration SINGLE
DC Current Gain-Min (hFE) 100 JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type PNP
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz Transistor Type PNP
Current - Collector (Ic) (Max) 2 A Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 350mV @ 200mA, 2A Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 1A, 2V Power - Max 480 mW
Frequency - Transition 200MHz Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Base Product Number PBSS5240

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