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PBSS5140T,215 +BOM

Bipolar (BJT) Transistor PNP 40 V 1 A 150MHz 450 mW Surface Mount TO-236AB

PBSS5140T,215 General Description

PNP low V transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4140T

Nexperia Semiconductor (NXP) Inventory

Key Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • AEC-Q101 qualified
Nexperia Semiconductor (NXP) Original Stock

Application

  • General-purpose switching and muting
  • LCD backlighting
  • Supply line switching circuits
  • Battery-driven equipment (mobile phones, video cameras and handheld devices)
Nexperia Semiconductor (NXP) Inventory

Specifications

Product Category: Bipolar Transistors - BJT Mounting Style: SMD/SMT
Transistor Polarity: PNP Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V Collector- Base Voltage VCBO: 40 V
Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 500 mV
Maximum DC Collector Current: 1 A Pd - Power Dissipation: 300 mW
Gain Bandwidth Product fT: 150 MHz Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C Qualification: AEC-Q101
Packaging: MouseReel Continuous Collector Current: - 1 A
DC Collector/Base Gain hfe Min: 300 DC Current Gain hFE Max: 300 at 1 mA, 5 V
Height: 1 mm Length: 3 mm
Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 3000
Subcategory: Transistors Technology: Si
Width: 1.4 mm Part # Aliases: 934056330215
Unit Weight: 0.000282 oz

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Ratings and Reviews

More
M
M**s 02/27/2024

Item exactly as described and represented. Excellent price. Fast delivery. Friendly communications.

10
E
E**n 02/10/2024

Tested, works fine. Average power consumption 5v/0.5A.

1
S
S**y 01/19/2024

It came in a month in saratov.

11
M
M**n 04/15/2023

Faster then expected. Thanks

16

Reviews

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