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PBRN113ZT-QR +BOM

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW Surface Mount TO-236AB

Manufacturer:

Nexperia
Mfr.Part #:

PBRN113ZT-QR
Datasheet:

PBRN113ZT-QR Datasheet (PDF)
Configuration:

Single
Transistor Polarity:

NPN
Typical Input Resistor:

1 kOhms
Typical Resistor Ratio:

10 kOhms
EDA/CAD Models:

Request Free CAD Models for PBRN113ZT-QR

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PBRN113ZT-QR General Description

The PBRN113ZT-QR is a high-performance NPN resistor-equipped transistor designed for low voltage applications. Housed in a small SOT23 surface-mounted device package, this product is versatile and suitable for a wide range of electronic designs. Its PNP complement, the PBRP113ZT-Q, offers a complete solution for complementary transistor pairs, further enhancing its applicability. With its compact size and high performance, the PBRN113ZT-QR is a reliable choice for modern electronic circuits

Key Features

600 mA output current capability
Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
± 10 % resistor ratio tolerance
Qualified according to AEC-Q101 and recommended for use in automotive applications

Application

Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver

Specifications

Product Category	Bipolar Transistors - Pre-Biased	Configuration	Single
Transistor Polarity	NPN	Typical Input Resistor	1 kOhms
Typical Resistor Ratio	10 kOhms	Mounting Style	SMD/SMT
DC Collector/Base Gain hfe Min	300 at 50 mA,5 V	Collector- Emitter Voltage VCEO Max	40 V
Continuous Collector Current	600 mA	Pd - Power Dissipation	370 mW
Minimum Operating Temperature	- 65 C	Maximum Operating Temperature	+ 150 C
Emitter- Base Voltage VEBO	5 V	Product Type	BJTs - Bipolar Transistors - Pre-Biased
Qualification	AEC-Q101	Factory Pack Quantity	3000
Subcategory	Transistors	Part # Aliases	934662851215