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PBSS4112PAN,115 +BOM

Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 1A 120MHz 510mW Surface Mount 6-HUSON (2x2)

Manufacturer:

Nexperia
Mfr.Part #:

PBSS4112PAN,115
Datasheet:

PBSS4112PAN,115 Datasheet (PDF)
Mounting Style:

SMD/SMT
Transistor Polarity:

NPN
Configuration:

Dual
Collector- Emitter Voltage VCEO Max:

120 V
EDA/CAD Models:

Request Free CAD Models for PBSS4112PAN,115

PBSS4112PAN,115 General Description

The PBSS4112PAN transistor sets the standard for NPN/NPN low V Breakthrough In Small Signal (BISS) transistors with its innovative design and high-performance capabilities. Housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package, this transistor offers reliability and efficiency in a compact form factor. The availability of NPN/PNP and PNP/PNP complements, the PBSS4112PANP and PBSS5112PAP respectively, further expands the versatility of this transistor, making it suitable for a wide range of circuit applications

Key Features

Rapid prototyping capability
Simple programming interface
Error detection and correction
Real-time monitoring and control

Application

Robust performance
Automotive applications
Smart electronics

Specifications

Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Dual
Collector- Emitter Voltage VCEO Max	120 V	Collector- Base Voltage VCBO	120 V
Emitter- Base Voltage VEBO	7 V	Collector-Emitter Saturation Voltage	90 mV
Maximum DC Collector Current	1 A	Pd - Power Dissipation	2 W
Gain Bandwidth Product fT	120 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	240	DC Current Gain hFE Max	375
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Part # Aliases	934066893115	Unit Weight	0.000256 oz