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PBSM5240PFH,115 +BOM

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

Manufacturer:

Nexperia
Mfr.Part #:

PBSM5240PFH,115
Datasheet:

PBSM5240PFH,115 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, PNP
Number Of Channels:

1 Channel
EDA/CAD Models:

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PBSM5240PFH,115 General Description

Combination of PNP low V Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Key Features

Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Application

Load switch
Power management
Power switches (e.g. motors, fans)
Battery-driven devices
Charging circuits

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, PNP
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	660 mA	Rds On - Drain-Source Resistance	580 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	700 mV
Qg - Gate Charge	890 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.1 W
Channel Mode	Enhancement	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Part # Aliases	934066562115	Unit Weight	0.000238 oz