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PBSM5240PF,115 +BOM

40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET

Manufacturer:

Nexperia
Mfr.Part #:

PBSM5240PF,115
Datasheet:

PBSM5240PF,115 Datasheet (PDF)
Mounting Style:

SMD/SMT
Vds - Drain-Source Breakdown Voltage:

30 V
Factory Pack Quantity:

3000
Part # Aliases:

934065127115
EDA/CAD Models:

Request Free CAD Models for PBSM5240PF,115

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PBSM5240PF,115 General Description

Combination of PNP low V Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.

Key Features

Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Application

Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)

Specifications

Product Category	MOSFET	Mounting Style	SMD/SMT
Vds - Drain-Source Breakdown Voltage	30 V	Product Type	MOSFET
Factory Pack Quantity	3000	Subcategory	MOSFETs
Part # Aliases	934065127115	Unit Weight	0.000238 oz