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PBSS4260PANPSX +BOM

60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor

PBSS4260PANPSX General Description

With its innovative design, the PBSS4260PANPSX stands out as a superior choice for small signal applications. Housed in a leadless SMD package, this dual transistor offers breakthrough performance in a compact form factor. The visible and solderable side pads enhance ease of installation, ensuring reliable connections in various electronic setups. Paired with its complementary transistors, the PBSS4260PANSPNP and PBSS5260PAPS, this device enables versatile circuit designs with NPN/NPN and PNP/PNP configurations. From mobile devices to industrial controls, the PBSS4260PANPSX is a reliable solution for demanding electronic projects

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Key Features

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • Reduced Printed-Circuit Board (PCB) requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • High energy efficiency due to less heat generation
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • AEC-Q101 qualified
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Application

  • Load switch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • LED lighting
  • Power switches (e.g. motors, fans)
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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 60 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 70 mV, 100 mV
Maximum DC Collector Current 2 A Pd - Power Dissipation 960 mW
Gain Bandwidth Product fT 140 MHz, 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Qualification AEC-Q101
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Part # Aliases 934068946115 Unit Weight 0.000257 oz

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In Stock: 7,072

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