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PBSS4140DPNF +BOM

NPN/PNP low V transistor pair in an SC-74 (SOT457) plastic package.

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PBSS4140DPNF General Description

NPN/PNP low V transistor pair in an SC-74 (SOT457) plastic package.

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Key Features

  • 600 mW total power dissipation
  • Low collector-emitter saturation voltage
  • High current capability
  • Improved device reliability due to reduced heat generation
  • Replaces two SOT23 packaged low VCEsat transistors on same PCB area
  • Reduces required PCB area
  • Reduced pick and place costs.
  • AEC-Q101 qualified
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Application

  • General purpose switching and muting
  • LCD backlighting
  • Supply line switching circuits
  • Battery driven equipment (mobile phones, video cameras and hand-held devices).
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Specifications

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 600 mW
Gain Bandwidth Product fT 150 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 10000 Subcategory Transistors
Technology Si Part # Aliases 934056660135
Unit Weight 0.000393 oz

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