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PDTC123JT +BOM

Bipolar Transistors - Pre-Biased

PDTC123JT General Description

NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.PNP complement: PDTA123JT

Key Features

  • 100 mA output current capability
  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Application

  • Digital application in industrial segments
  • Cost-saving alternative for BC847 series in digital applications
  • Controlling IC inputs
  • Switching loads

Specifications

Source Content uid PDTC123JT Pbfree Code Yes
Part Life Cycle Code Transferred Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.21.00.95 Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 21
Collector Current-Max (IC) 0.1 A Collector-Base Capacitance-Max 3.5 pF
Collector-Emitter Voltage-Max 50 V Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 100 JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.25 W Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin (Sn) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
VCEsat-Max 0.3 V

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