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PE507BA +BOM

P-Channel Logic Level Enhancement Mode MOSFET

PE507BA

Key Features

  • High safety, Self-healing and Self-protecting function built-in
  • Long product life, High reliability
  • Low loss, Low ESR
  • Flame retardant (Case and sealing resin)
  • RoHS directive compliant

Specifications

Part Life Cycle Code Contact Manufacturer Reach Compliance Code
ECCN Code EAR99 Avalanche Energy Rating (Eas) 87 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10 A Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JESD-30 Code S-PDSO-F8
Number of Elements 1 Number of Terminals 8
Operating Mode ENHANCEMENT MODE Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 50 A Surface Mount YES
Terminal Form FLAT Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Element Material SILICON

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