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PMBT2222A,215 +BOM

NPN Bipolar Junction Transistor 40V 0.6A

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NPN switching transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Source Content uid	PMBT2222A,215	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Date Of Intro	1997-09-01
Additional Feature	HIGH CURRENT DRIVER	Application	SWITCHING
Configuration	SINGLE	DC Current Gain-Min (hFE)	40
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	NPN	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	NPN
Collector- Emitter Voltage VCEO Max	40 V	Collector- Base Voltage VCBO	75 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	1 V
Maximum DC Collector Current	600 mA	Pd - Power Dissipation	250 mW
Gain Bandwidth Product fT	300 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	600 mA
DC Collector/Base Gain hfe Min	30	DC Current Gain hFE Max	300
Height	1 mm	Length	3 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Width	1.4 mm	Part # Aliases	933821790215
Unit Weight	0.000265 oz