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See Technical Specifications

PSMN7R0-60YS +BOM

TRANSISTOR 89 A, 60 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, LFPAK-4, FET General Purpose Power

Manufacturer:

NXP
Mfr.Part #:

PSMN7R0-60YS
Datasheet:

PSMN7R0-60YS Datasheet (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Date Of Intro:

2017-02-01

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

Avaq Semiconductor offers the highly versatile and reliable PSMN7R0-60YS driver, produced by NXP. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.

To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the PSMN7R0-60YS.

Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.

Specifications

Source Content uid	PSMN7R0-60YS	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Date Of Intro	2017-02-01	Avalanche Energy Rating (Eas)	143 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	89 A
Drain-source On Resistance-Max	0.0064 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-235	JESD-30 Code	R-PSSO-G4
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	4
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	356 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON