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RE1C001ZPTL +BOM

Transistor MOSFET P-CH 20V 100mA 3-Pin SC-89 Emboss T/R

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RE1C001ZPTL
Datasheet:

RE1C001ZPTL Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

100mA (Ta)
EDA/CAD Models:

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RE1C001ZPTL General Description

Featuring P-channel transistor polarity, the RE1C001ZPTL MOSFET is a versatile component with a drain source voltage of -20V and a continuous drain current of -100mA. Its on resistance of 2.5ohm and threshold voltage of -1V make it ideal for low power applications. With a power dissipation of 150mW and the SC-89 case style, this MOSFET is designed for reliable performance in electronic circuits up to 150°C

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V	Rds On (Max) @ Id, Vgs	3.8Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100µA	Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	15 pF @ 10 V	Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	RE1C001