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RE1C002ZPTL +BOM

20V P-Type Metal-Oxide-Semiconductor Field-Effect Transistor with a current rating of 0.2A, housed in a 3-pin SOT-416FL package, supplied on a reel

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RE1C002ZPTL
Datasheet:

RE1C002ZPTL Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

200mA (Ta)
EDA/CAD Models:

Request Free CAD Models for RE1C002ZPTL

Email: [email protected]

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Tel: +852 95804164

RE1C002ZPTL General Description

With its ultra-low ON-resistance, the RE1C002ZPTL MOSFET delivers exceptional performance in terms of power efficiency, making it well-suited for mobile equipment. The use of micro-processing technologies further enhances its capabilities, ensuring that it meets the stringent demands of modern electronic devices. The wide lineup of MOSFETs expands the application possibilities, providing options for compact designs, high-power requirements, and complex configurations. This versatility is a key advantage for manufacturers seeking reliable components that can address various market needs effectively

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V	Rds On (Max) @ Id, Vgs	1.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 4.5 V
Vgs (Max)	±10V	Input Capacitance (Ciss) (Max) @ Vds	115 pF @ 10 V
Power Dissipation (Max)	150mW (Ta)	Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	RE1C002