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See Technical Specifications

RE1J002YNTCL +BOM

Swiftly deliverable item conforming to RoHS standards, with a 2022 discontinuation

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RE1J002YNTCL
Datasheet:

RE1J002YNTCL Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

50 V
Current - Continuous Drain (Id) @ 25°C:

200mA (Ta)
EDA/CAD Models:

Request Free CAD Models for RE1J002YNTCL

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RE1J002YNTCL General Description

The RE1J002YNTCL is a high-quality 0.9V Drive Nch MOSFET that is specially designed to meet the needs of mobile equipment for low current consumption. With ultra-low ON-resistance achieved through advanced micro-processing technologies, this MOSFET offers excellent performance and efficiency. The wide lineup includes compact, high-power, and complex types, catering to the diverse needs of the market. Whether you require a MOSFET for compact mobile devices or high-power applications, this product has options to suit your specific requirements

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V	Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	0.9V, 4.5V	Rds On (Max) @ Id, Vgs	2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	800mV @ 1mA	Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	26 pF @ 10 V	Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	RE1J002