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RFP8N20 +BOM

N-Channel MOSFET for Power

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RFP8N20 General Description

N-Channel 200 V 8A (Tc) 60W (Tc) Through Hole TO-220AB

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
FET Feature - Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole

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In Stock: 4,083

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.595 $0.60
200+ $0.230 $46.00
500+ $0.222 $111.00
1000+ $0.219 $219.00

The prices below are for reference only.

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