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RK3055ETL +BOM

Power Field-Effect Transistor, 8A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, 3 PIN

Manufacturer:

ROHM Semiconductor
Mfr.Part #:

RK3055ETL
Datasheet:

RK3055ETL Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

RK3055ETL General Description

Product RK3055ETL is a N-Channel Power MOSFET that boasts a Continuous Drain Current (Id) of 4A, making it suitable for various power applications. With a Drain Source Voltage (Vds) of 60V and an On Resistance (Rds(on)) of 150mohm, this transistor offers efficient performance. The Threshold Voltage (Vgs) Typ is 2.5V, ensuring reliable operation within a wide Operating Temperature Range of -55°C to +150°C

Key Features

1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Low-voltage drive.
5) Easily designed drive circuits.
6) Easy to use in parallel.
Structure
Silicon N-channel MOSFET

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	8 A	Rds On - Drain-Source Resistance	150 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	20 W
Channel Mode	Depletion	Configuration	Single
Fall Time	20 ns	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	20 ns	Factory Pack Quantity	1
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	5 ns	Width	5.5 mm
Part # Aliases	RK3055E	Unit Weight	0.011640 oz