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RK7002T116 +BOM

RK7002T116 N-Type MOSFET in SOT23 Package

RK7002T116 General Description

N-Channel 60 V 115mA (Ta) 225mW (Ta) Surface Mount SST3

Key Features

1) Low on-resistance.

2) Fast switching speed.

3) Low-voltage drive.

4) Easily designed drive circuits.

5) Easy to parallel.

Application

SWITCHING

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V Drain Current-Max (ID) 0.115 A
Drain-source On Resistance-Max 7.5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF JESD-30 Code R-PDSO-G3
JESD-609 Code e1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 115 mA Rds On - Drain-Source Resistance 7.5 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 225 mW
Channel Mode Enhancement Height 0.95 mm
Length 2.9 mm Product MOSFET Small Signals
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 12 ns Width 1.3 mm
Part # Aliases RK7002 Unit Weight 0.000282 oz

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