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RK7002AT116 +BOM

Recommended alternative for MOSFET RK7002BMT116

Manufacturer:

Rohm Semiconductor
Mfr.Part #:

RK7002AT116
Datasheet:

RK7002AT116 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

300mA (Ta)
EDA/CAD Models:

Request Free CAD Models for RK7002AT116

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RK7002AT116 General Description

Product RK7002AT116 is a MOSFET with N Channel Transistor Polarity and a Continuous Drain Current Id of 300mA. It has a Drain Source Voltage Vds of 60V and an On Resistance Rds(on) of 1ohm with Rds(on) Test Voltage Vgs of 10V. The Threshold Voltage Vgs is 2.5V and it has a Power Dissipation Pd of 200mW. The Transistor Case Style is SOT-23 with 3 Pins and an Operating Temperature Max of 150°C

Key Features

1) Low on-resistance.

2) High ESD

3) High-speed switching.

4) Low-voltage drive (4V).

5) Easily designed drive circuits.

6) Easy to use in parallel.

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	1Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	33 pF @ 10 V
Power Dissipation (Max)	200mW (Ta)	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	RK7002